Thermal effects on the electrical degradation of thin film resistors

被引：22

作者：

Pennetta, C

Reggiani, L

Kiss, LB

机构：

[1] Univ Lecce, Dipartimento Fis, Ist Nazl Fis Mat, I-73100 Lecce, Italy

[2] Univ Lecce, Dipartimento Sci Mat, Ist Nazl Fis Mat, I-73100 Lecce, Italy

[3] Univ Uppsala, Dept Mat Sci, Angstrom Lab, S-75121 Uppsala, Sweden

来源：

PHYSICA A | 1999年 / 266卷 / 1-4期

关键词：

percolation models; 1/f electrical noise; thin film failure;

D O I：

10.1016/S0378-4371(98)00594-9

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Recently we introduced a biased percolation model to study the electrical failure of thin-film resistors. Here we extend this model by allowing thermal interactions among first neighbour elemental resistances and accounting for the dependence of each elemental resistance on the local temperature. Monte Carlo simulations are performed to investigate the main properties of the film degradation such as: damage pattern, film lifetime, evolution of the resistance and of the 1/f resistance-noise spectrum. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：214 / 217

页数：4

共 8 条

[1] 1/f noise as an early indicator of electromigration damage in thin metal films [J].