1/f noise as an early indicator of electromigration damage in thin metal films

被引:38
作者
Dagge, K [1 ]
Frank, W [1 ]
Seeger, A [1 ]
Stoll, H [1 ]
机构
[1] UNIV STUTTGART,INST THEORET & ANGEW PHYS,D-70569 STUTTGART,GERMANY
关键词
D O I
10.1063/1.115967
中图分类号
O59 [应用物理学];
学科分类号
摘要
Electromigration in thin films of aluminium and aluminium alloys is shown to lead to stepwise increases of the electrical 1/f noise. These are attributed to the generation of highly mobile defect configurations by a nucleation-and-growth process. It is conjectured that among them may be the defects that are responsible for the eventual failure of VLSI electronic devices by electromigration damage. 1/f noise promises to be an early indicator of this damage. (C) 1996 American Institute of Physics.
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收藏
页码:1198 / 1200
页数:3
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