Influence of trap states on dynamic properties of single grain silicon thin film transistors

被引：17

作者：

Yan, F

Migliorato, P

Ishihara, R

机构：

[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England

[2] Delft Univ Technol, ECTM, DIMES, NL-2600 GB Delft, Netherlands

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 15期

关键词：

D O I：

10.1063/1.2193049

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The transient properties of single grain-thin film transistors (SG-TFTs) with high electron mobility have been studied. Overshoot current induced by trap states has been observed in most of the devices. A method of ac measurements has been used to investigate the trap processes. Both transient and ac measurements show that the response of some SG-TFTs with high field effect mobility is dominated by a single trap level. Bias stressing on SG-TFT can induce more trap states and thus change the ac response of the device.

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页数：3

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