As/P exchange on InP(001) studied by reflectance anisotropy spectroscopy

被引：31

作者：

Sobiesierski, Z ^{[1
]}

Westwood, DI ^{[1
]}

Parbrook, PJ ^{[1
]}

Ozanyan, KB ^{[1
]}

Hopkinson, M ^{[1
]}

Whitehouse, CR ^{[1
]}

机构：

[1] UNIV SHEFFIELD,DEPT ELECT & ELECT ENGN,IRC SEMICOND MAT,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 11期

关键词：

D O I：

10.1063/1.118595

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Reflectance anisotropy spectroscopy (RAS) has been used to investigate the As/P exchange reaction for group V stabilized InP(001) surfaces exposed to As-2 and/or P-2, under molecular beam epitaxy conditions. By comparing RAS spectra taken before, during, and after As, exposure it is possible to confirm that the As/P exchange reaction is exactly reversible over a range of temperatures from 420 to 560 degrees C. Time-resolved RAS measurements of the reaction rate, monitored at an energy of 2.65 eV, indicate that the activation energy for the exchange is 1.23 +/- 0.05 eV. (C) 1997 American Institute of Physics.

引用

页码：1423 / 1425

页数：3

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