OBSERVATION OF PHOTOLUMINESCENCE FROM INAS SURFACE QUANTUM-WELLS GROWN ON INP(100) BY MOLECULAR-BEAM EPITAXY

被引：25

作者：

SOBIESIERSKI, Z

CLARK, SA

WILLIAMS, RH

TABATA, A

BENYATTOU, T

GUILLOT, G

GENDRY, M

HOLLINGER, G

VIKTOROVITCH, P

机构：

[1] INST NATL SCI APPL,LPM,CNRS,URA 358,F-69621 VILLEURBANNE,FRANCE

[2] ECOLE CENT LYON,LEAME,CNRS,URA 848,F-69131 ECULLY,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 17期

关键词：

D O I：

10.1063/1.105055

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoluminescence (PL) measurements are presented for thin epitaxial layers of InAs, 2.5 angstrom < d < 36 angstrom, grown on InP (100) by molecular beam epitaxy. The combination of efficient carrier capture and PL redshift with increasing InAs thickness clearly indicate the formation of InAs quantum wells on the InP surface. Data are also presented for InAs/InP structures capped with strained layers of either GaAs or In0.5 Al0.5 As. Since radiative recombination within the InAs layers can be distinguished from PL arising from both bulk and surface defects, this system allows us to monitor the quality of both the InAs/InP and InAs/air interfaces via their influence on the InAs quantum well luminescence.

引用

页码：1863 / 1865

页数：3

共 12 条

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