Synthesis and characterisation of co-evaporated tin sulphide thin films

被引：101

作者：

Reddy, NK ^{[1
]}

Ramesh, K

Ganesan, R

Reddy, KTR

Gunasekhar, KR

Gopal, ESR

机构：

[1] Indian Inst Sci, Dept Phys, Bangalore 560012, Karnataka, India

[2] Sri Venkateswara Univ, Dept Phys, Tirupati 517502, Andhra Pradesh, India

[3] Indian Inst Sci, Dept Instrumentat, Bangalore 560012, Karnataka, India

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2006年 / 83卷 / 01期

关键词：

D O I：

10.1007/s00339-005-3475-y

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Tin sulphide films were grown at different substrate temperatures by a thermal co-evaporation technique. The crystallinity of the films was evaluated from X-ray diffraction studies. Single-phase SnS films showed a strong (040) orientation with an orthorhombic crystal structure and a grain size of 0.12 mu m. The films showed an electrical resistivity of 6.1 Omega cm with an activation energy of 0.26 eV. These films exhibited an optical band gap of 1.37 eV and had a high optical absorption coefficient (> 10(4) cm(-1)) above the band-gap energy. The results obtained were analysed to evaluate the potentiality of the co-evaporated SnS films as an absorber layer in solar photovoltaic devices.

引用

页码：133 / 138

页数：6

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