Formation of nanocrystalline diamond by hydrocarbon plasma beam deposition

被引:14
作者
Sattel, S
Robertson, J
Tass, Z
Scheib, M
Wiescher, D
Ehrhardt, H
机构
[1] UNIV CAMBRIDGE,DEPT ELECT ENGN,CAMBRIDGE CB2 1PZ,ENGLAND
[2] TECH UNIV BUDAPEST,DEPT ATOM PHYS,H-1111 BUDAPEST,HUNGARY
[3] UNIV KAISERSLAUTERN,IFOS,D-67663 KAISERSLAUTERN,GERMANY
关键词
diamond CVD; a-C:H; nucleation; ion beam growth;
D O I
10.1016/S0925-9635(96)00648-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Diamond crystallites up to 40 nm in size have been grown from a highly ionised plasma beam of acetylene for ion energies close to 100 eV per C atom and substrate temperatures above 450 degrees C. This shows that diamond can be grown by physical vapour deposition from an ion-rich plasma as well as by chemical vapour deposition from a radical-rich plasma. The formation mechanism is argued to be one of nucleation and growth rather than a stress-induced transformation from graphite. (C) 1997 Elsevier Science S.A.
引用
收藏
页码:255 / 260
页数:6
相关论文
共 31 条
[1]   ION-BEAM DEPOSITION OF THIN FILMS OF DIAMONDLIKE CARBON [J].
AISENBERG, S ;
CHABOT, R .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (07) :2953-+
[2]  
ANGUS JC, 1988, SCIENCE, V241, P613
[3]  
CHAIKOVSKY EF, 1982, SOV PHYS-CRYSTALLOGR, V26, P122
[4]   NEW DEVELOPMENTS IN THE FIELD OF SUPERHARD COATINGS [J].
EHRHARDT, H .
SURFACE & COATINGS TECHNOLOGY, 1995, 74-5 (1-3) :29-35
[5]   CORRELATION BETWEEN ION-FLUX AND MICROSTRUCTURE OF A-C-H FILMS [J].
EHRHARDT, H ;
KLEBER, R ;
KRUGER, A ;
DWORSCHAK, W ;
JUNG, K ;
MUHLING, I ;
ENGELKE, F ;
METZ, H .
DIAMOND AND RELATED MATERIALS, 1992, 1 (2-4) :316-320
[6]   THE ROLE OF HYDROGEN IN VAPOR-DEPOSITION OF DIAMOND [J].
FRENKLACH, M .
JOURNAL OF APPLIED PHYSICS, 1989, 65 (12) :5142-5149
[7]   EXPERIMENTAL CHARACTERIZATION OF BIAS-ENHANCED NUCLEATION OF DIAMOND ON SI [J].
GERBER, J ;
SATTEL, S ;
JUNG, K ;
EHRHARDT, H ;
ROBERTSON, J .
DIAMOND AND RELATED MATERIALS, 1995, 4 (5-6) :559-562
[8]   SURFACE-REACTION KINETICS OF GAS-PHASE DIAMOND GROWTH [J].
KONDOH, E ;
OHTA, T ;
MITOMO, T ;
OHTSUKA, K .
JOURNAL OF APPLIED PHYSICS, 1993, 73 (06) :3041-3046
[9]   DIAMOND NUCLEATION BY HYDROGENATION OF THE EDGES OF GRAPHITIC PRECURSORS [J].
LAMBRECHT, WRL ;
LEE, CH ;
SEGALL, B ;
ANGUS, JC ;
LI, ZD ;
SUNKARA, M .
NATURE, 1993, 364 (6438) :607-610
[10]   DIRECT ION-BEAM DEPOSITION OF CARBON-FILMS ON SILICON IN THE ION ENERGY-RANGE OF 15-500 EV [J].
LAU, WM ;
BELLO, I ;
FENG, X ;
HUANG, LJ ;
QIN, FG ;
YAO, ZY ;
REN, ZZ ;
LEE, ST .
JOURNAL OF APPLIED PHYSICS, 1991, 70 (10) :5623-5627