Photoconductance-calibrated photoluminescence lifetime imaging of crystalline silicon

被引：84

作者：

Herlufsen, Sandra ^{[1
]}

Schmidt, Jan ^{[1
]}

Hinken, David ^{[1
]}

Bothe, Karsten ^{[1
]}

Brendel, Rolf ^{[1
]}

机构：

[1] ISFH, D-31860 Emmerthal, Germany

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2008年 / 2卷 / 06期

关键词：

D O I：

10.1002/pssr.200802192

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We use photoluminescence (PL) measurements by a silicon charge-coupled device camera to generate high-resolution lifetime images of multicrystalline silicon wafers. Absolute values of the excess carrier density are determined by calibrating the PL image by means of contactless photoconductance measurements. The photoconductance setup is integrated in the camera-based PL setup and therefore identical measurement conditions are realised. We demonstrate the validity of this method by comparison with microwave-detected photoconductance decay measurements. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：245 / 247

页数：3

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