Oxygen-related minority-carrier trapping centers in p-type Czochralski silicon

被引：49

作者：

Schmidt, J ^{[1
]}

Bothe, K ^{[1
]}

Hezel, R ^{[1
]}

机构：

[1] Inst Solarenergie Forsch Hameln, D-31860 Emmerthal, Germany

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 23期

关键词：

D O I：

10.1063/1.1483908

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate minority-carrier trapping centers in p-type Czochralski (Cz) silicon by means of the quasi-steady-state photoconductance method. Boron and gallium-doped Cz silicon wafers of varying resistivities and oxygen contamination levels are examined. A clear correlation of the trap density with the interstitial oxygen concentration as well as with the boron and the gallium concentration is detected. The experimental data suggest that oxygen is a direct component of the defect complex responsible for the trapping, while the role of boron and gallium is not fully resolved. Using a simple single-level trapping model, we determine the energy level and the trapping/detrapping time constant ratio of the oxygen-related trapping center. (C) 2002 American Institute of Physics.

引用

页码：4395 / 4397

页数：3

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