Annealing effects in ZnSe/GaAs heterostructure grown by molecular beam epitaxy

被引：6

作者：

Leem, JY ^{[1
]}

Son, JS ^{[1
]}

Lee, CR ^{[1
]}

Kim, CS ^{[1
]}

Cho, YK ^{[1
]}

Lee, IJ ^{[1
]}

Noh, SK ^{[1
]}

Bae, IH ^{[1
]}

机构：

[1] YEUNGNAM UNIV,DEPT PHYS,KYONGSAN 712749,SOUTH KOREA

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 22期

关键词：

D O I：

10.1063/1.120307

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In the ZnSe/GaAs heterostructure, the problems of interdiffusion and thermal stability are very crucial. We have investigated the effects of annealing on ZnSe grown on GaAs by photoluminescence and double-crystal x-ray measurement. In order to investigate annealing effects of the ZnSe/GaAs heterostructure, we used 1.0-mu m-thick and 0.2-mu m-thick samples. Samples were annealed in the temperature range of 200-500 degrees C in an N-2 ambient for 3 min using a face-to-face configuration with ZnSe epitaxial layer as a cap layer. In the annealing temperature above 450 degrees C, new emission peaks appeared in the range of 2.62-2.72 eV. The biaxial compressive strain due to lattice mismatch at the growth temperature is mostly relaxed at 400 degrees C, and the epilayer annealed at 500 degrees C has a biaxial tensile strain. (C) 1997 American Institute of Physics.

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页码：3257 / 3259

页数：3

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