Interface inequivalence of the InP/InAlAs/InP staggered double heterostructure grown by metalorganic chemical vapor deposition

被引：28

作者：

Bohrer, J ^{[1
]}

Krost, A ^{[1
]}

Heitz, R ^{[1
]}

Heinrichsdorff, F ^{[1
]}

Eckey, L ^{[1
]}

Bimberg, D ^{[1
]}

Cerva, H ^{[1
]}

机构：

[1] SIEMENS AG, D-81739 MUNICH, GERMANY

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 08期

关键词：

D O I：

10.1063/1.115716

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The optical and structural properties of the normal InAlAs on InP and the inverted InP on the InAlAs staggered band lineup interface grown by metalorganic chemical vapor deposition (MOCVD) are compared by use of transmission electron microscopy (TEM), time integrated, and time resolved photoluminescence. TEM images show that both interfaces are dissimilar. The normal interface is very abrupt. The inverted interface shows an additional graded layer of about 2.5 nm in width of In1-xAlxAsyP1-y with x (0.48-0) and y (1.0-0.0). A large optical anisotropy exists because of the inequivalence of the two interfaces. The larger spatial separation of the carriers at the inverted interface is responsible for a smaller overlap of the electron and hole wave functions and for that reason a one order of magnitude longer e-h luminescence decay time of 45 ns is observed. The normal interface transition shifts approximately to the third root of excitation while the inverted interface transition shifts logarithmically. (C) 1996 American Institute of Physics.

引用

页码：1072 / 1074

页数：3

共 18 条

[1] HIGH MOBILITY ALINAS/INP HIGH ELECTRON-MOBILITY TRANSISTOR STRUCTURES GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].