Electron transporting water-gated thin film transistors

被引：21

作者：

Al Naim, Abdullah ^{[1
]}

Grell, Martin ^{[1
]}

机构：

[1] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 14期

关键词：

ROOM-TEMPERATURE; PERFORMANCE; MOBILITY;

D O I：

10.1063/1.4757131

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate an electron-transporting water-gated thin film transistor, using thermally converted precursor-route zinc-oxide (ZnO) intrinsic semiconductors with hexamethyldisilazene (HMDS) hydrophobic surface modification. Water gated HMDS-ZnO thin film transistors (TFT) display low threshold and high electron mobility. ZnO films constitute an attractive alternative to organic semiconductors for TFT transducers in sensor applications for waterborne analytes. Despite the use of an electrolyte as gate medium, the gate geometry (shape of gate electrode and distance between gate electrode and TFT channel) is relevant for optimum performance of water-gated TFTs. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4757131]

引用

页数：4

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