A Water-Gate Organic Field-Effect Transistor

被引：261

作者：

Kergoat, Loig ^{[1
]}

Herlogsson, Lars ^{[2
]}

Braga, Daniele ^{[1
]}

Piro, Benoit ^{[1
]}

Pham, Minh-Chau ^{[1
]}

Crispin, Xavier ^{[2
]}

Berggren, Magnus ^{[2
]}

Horowitz, Gilles ^{[1
]}

机构：

[1] Univ Paris Diderot, ITODYS, F-75205 Paris 13, France

[2] ITN Linkoping Univ, SE-60174 Norrkoping, Sweden

来源：

ADVANCED MATERIALS | 2010年 / 22卷 / 23期

基金：

瑞典研究理事会;

关键词：

DIELECTRICS; MOBILITY;

D O I：

10.1002/adma.200904163

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

High-dielectric-constant insulators, organic monolayers, and electrolytes have been successfully used to generate organic field-effect transistors operating at low voltages. Here, we report on a device gated with pure water. By replacing the gate dielectric by a simple water droplet, we produce a transistor that entirely operates in the field-effect mode of operation at voltages lower than 1V. This result creates opportunities for sensor applications using water-gated devices as transducing medium.

引用

页码：2565 / 2569

页数：5

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