Strain effect on the N composition dependence of GaNAs bandgap energy grown on (001) GaAs by metalorganic molecular beam epitaxy

被引：25

作者：

Uesugi, K ^{[1
]}

Morooka, N ^{[1
]}

Suemune, I ^{[1
]}

机构：

[1] Hokkaido Univ, Res Inst Elect Sci, Sapporo, Hokkaido 0600812, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 201卷

关键词：

GaNAs; bandgap energy; metalorganic molecular beam epitaxy; X-ray diffraction; XRD mapping;

D O I：

10.1016/S0022-0248(98)01352-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We study the N composition dependence of GaNAs bandgap energy up to 4.5%. The lattice structures and lattice strain of GaNAs films were characterized by the high-resolution X-ray diffraction (XRD) mapping measurements. By the asymmetric (1 1 5) XRD mapping measurements, the precise elastic deformation of the epitaxial films was determined. The measured bandgap of the coherently strained GaNAs is very close to the theoretical bandgap based on the dielectric model for N composition less than 1.5%. Above this value, it deviates considerably from the dielectric model calculation. The theoretical calculations based on the first-principle supercell calculations cannot explain the measured bandgap properties with the increase of the N composition. The influence of inhomogeneity in GaNAs films on the bandgap bowing will be also discussed. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：355 / 358

页数：4

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