The shape of self-assembled InAs islands grown by molecular beam epitaxy

被引：13

作者：

Lee, H ^{[1
]}

Yang, WD

Sercel, PC

Norman, AG

机构：

[1] Univ Oregon, Inst Mat Sci, Dept Phys, Eugene, OR 97403 USA

[2] Univ Oregon, Oregon Ctr Opt, Eugene, OR 97403 USA

[3] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1999年 / 28卷 / 05期

关键词：

{136} facets; atomic force microscopy (AFM); cross-section transmission electron microscopy (TEM); InAs quantum dot shape; polarization-resolved photoluminescence (PL); reflection high energy electron diffraction (RHEED);

D O I：

10.1007/s11664-999-0098-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have determined the shape of InAs quantum dots using reflection high energy electron diffraction. Our results indicate that self-assembled InAs islands possess a pyramidal shape with {136} bounding facets. This shape is characterized by C-2 upsilon symmetry and a parallelogram base, which is elongated along the [1(1) over bar 0] direction. Cross-sectional transmission electron microscopy images taken along the [110] and [1(1) over bar 0] directions as well as atomic force microscopy images strongly support the {136} shape. Furthermore, polarization-resolved photoluminescence spectra show-strong in-plane anisotropy, with emission predominantly polarized along the [1(1) over bar 0] direction, consistent with the proposed quantum dot shape.

引用

页码：481 / 485

页数：5

共 38 条

[11] A reflection high-energy electron diffraction and atomic force microscopy study of the chemical beam epitaxial growth of InAs and InP islands on (001) GaP [J].

Junno, B ;

Junno, T ;

Miller, MS ;

Samuelson, L .

APPLIED PHYSICS LETTERS, 1998, 72 (08) :954-956

[12]

KIM J, 1998, PHYS REV B, V57, P9408

[13] In situ, atomic force microscope studies of the evolution of InAs three-dimensional islands on GaAs(001) [J].

Kobayashi, NP ;

Ramachandran, TR ;

Chen, P ;

Madhukar, A .

APPLIED PHYSICS LETTERS, 1996, 68 (23) :3299-3301

[14] Formation of InAs/GaAs quantum dots by molecular beam epitaxy: Reversibility of the islanding transition [J].

Lee, H ;

LoweWebb, RR ;

Yang, WD ;

Sercel, PC .

APPLIED PHYSICS LETTERS, 1997, 71 (16) :2325-2327

[15] Temperature and excitation dependence of photoluminescence line shape in InAs/GaAs quantum-dot structures [J].

Lee, H ;

Yang, WD ;

Sercel, PC .

PHYSICAL REVIEW B, 1997, 55 (15) :9757-9762

[16] Determination of the shape of self-organized InAs/GaAs quantum dots by reflection high energy electron diffraction [J].

Lee, H ;

Lowe-Webb, R ;

Yang, WD ;

Sercel, PC .

APPLIED PHYSICS LETTERS, 1998, 72 (07) :812-814

[17]

LEE H, 1998, P 24 INT C SEM PHYS

[18] CRITICAL LAYER THICKNESS FOR SELF-ASSEMBLED INAS ISLANDS ON GAAS [J].

LEONARD, D ;

POND, K ;

PETROFF, PM .

PHYSICAL REVIEW B, 1994, 50 (16) :11687-11692

[19] DIRECT FORMATION OF QUANTUM-SIZED DOTS FROM UNIFORM COHERENT ISLANDS OF INGAAS ON GAAS-SURFACES [J].

LEONARD, D ;

KRISHNAMURTHY, M ;

REAVES, CM ;

DENBAARS, SP ;

PETROFF, PM .

APPLIED PHYSICS LETTERS, 1993, 63 (23) :3203-3205

[20]

LIAO XZ, 1998, PHYS REV B, V58, P4235

← 1 2 3 4 →