Detailed Investigation of Light Induced Charge Injection into a Single Conjugated Polymer Chain

被引：15

作者：

Bolinger, Josh ^{[1
]}

Lee, Kwang-Jik ^{[1
]}

Palacios, Rodrigo E. ^{[1
]}

Barbara, Paul F. ^{[1
]}

机构：

[1] Univ Texas Austin, Ctr Nano & Mol Sci & Technol, Austin, TX 78712 USA

来源：

JOURNAL OF PHYSICAL CHEMISTRY C | 2008年 / 112卷 / 47期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1021/jp804901s

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Detailed single molecule spectroscopic results are presented for the recently reported oxidation of single-chain conjugated polymers of MEH-PPV at the HTL/insulator interface of an MIS device. The charge injection process was determined to be light dominated with no charging occurring in the dark at any applied bias. The nature of the optical preparation of the injected charge is explored by a range of single molecule fluorescence voltage modulation techniques. The observed charging dynamics are highly consistent with a cooperative charging effect. It is also observed that analogous charging occurs for the conjugated polymer F8BT.

引用

页码：18608 / 18615

页数：8

共 64 条

[1] Polarization at the gold/pentacene interface [J].

Amy, F ;

Chan, C ;

Kahn, A .

ORGANIC ELECTRONICS, 2005, 6 (02) :85-91

[2] High-efficiency fluorescent organic light-emitting devices using a phosphorescent sensitizer [J].

Baldo, MA ;

Thompson, ME ;

Forrest, SR .

NATURE, 2000, 403 (6771) :750-753

[3] Interfacial charges in organic hetero-layer light emitting diodes probed by capacitance-voltage measurements [J].

Berleb, S ;

Brütting, W ;

Paasch, G .

SYNTHETIC METALS, 2001, 122 (01) :37-39

[4] Interfacial charges and electric field distribution in organic hetero-layer light-emitting devices [J].

Berleb, Stefan ;

Bruetting, Wolfgang ;

Paasch, Gernot .

ORGANIC ELECTRONICS, 2000, 1 (01) :41-47

[5]

BOLINGER JC, P NATL ACAD SC UNPUB

[6] RELIABILITY AND DEGRADATION OF ORGANIC LIGHT-EMITTING DEVICES [J].

BURROWS, PE ;

BULOVIC, V ;

FORREST, SR ;

SAPOCHAK, LS ;

MCCARTY, DM ;

THOMPSON, ME .

APPLIED PHYSICS LETTERS, 1994, 65 (23) :2922-2924

[7] Effect of active layer thickness on bias stress effect in pentacene thin-film transistors [J].

Chang, Josephine B. ;

Subramanian, Vivek .

APPLIED PHYSICS LETTERS, 2006, 88 (23)

[8] General observation of n-type field-effect behaviour in organic semiconductors [J].

Chua, LL ;

Zaumseil, J ;

Chang, JF ;

Ou, ECW ;

Ho, PKH ;

Sirringhaus, H ;

Friend, RH .

NATURE, 2005, 434 (7030) :194-199

[9] Influence of bias stressing and irradiation on poly-three-hexylthiophene based field effect transistors [J].

Devine, R. A. B. .

JOURNAL OF APPLIED PHYSICS, 2006, 99 (08)

[10] X-ray irradiation effects in top contact, pentacene based field effect transistors for space related applications [J].

Devine, RAB ;

Ling, MM ;

Mallik, AB ;

Roberts, M ;

Bao, Z .

APPLIED PHYSICS LETTERS, 2006, 88 (15)

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