Comparison of strain relaxation in InGaAsN and InGaAs thin films

被引：20

作者：

Adamcyk, M ^{[1
]}

Schmid, JH

Tiedje, T

Koveshnikov, A

Chahboun, A

Fink, V

Kavanagh, KL

机构：

[1] Univ British Columbia, Dept Phys & Astron, Vancouver, BC V6T 1Z4, Canada

[2] Simon Fraser Univ, Dept Phys, Burnaby, BC V5A 1S6, Canada

[3] Dept Elect & Comp Engn, Vancouver, BC V6T 1Z1, Canada

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 23期

关键词：

D O I：

10.1063/1.1485124

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We compare the strain relaxation of In0.08Ga0.92As and In0.12Ga0.88As0.99N0.01 epitaxial thin films grown on GaAs (001) by elemental-source molecular-beam epitaxy. The epilayers we studied were essentially identical in their compressive lattice mismatch (0.62+/-0.02%), and thickness (600 nm). The strain state of the samples was determined by in situ substrate curvature monitoring, and by ex situ x-ray diffraction and plan-view transmission electron microscopy. We observe a slower rate of strain relaxation, and a 25% higher residual strain in the nitride. This is attributed to the presence of nitrogen interstitials in the InGaAsN epilayers and/or to the higher nitrogen bond strengths. (C) 2002 American Institute of Physics.

引用

页码：4357 / 4359

页数：3

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