Faceting transition in epitaxial growth of dilute GaNAs films on GaAs

被引：10

作者：

Adamcyk, M ^{[1
]}

Tixier, S

Ruck, BJ

Schmid, JH

Tiedje, T

Fink, V

Jeffries, M

Karaiskaj, D

Kavanagh, KL

Thewalt, M

机构：

[1] Univ British Columbia, Dept Phys & Astron, Vancouver, BC V6T 1Z1, Canada

[2] Simon Fraser Univ, Dept Phys, Burnaby, BC V5A 1S6, Canada

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2001年 / 19卷 / 04期

关键词：

D O I：

10.1116/1.1386379

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An abrupt transition to a {111} faceted growth mode is observed in molecular-beam-epitaxy growth of dilute GaNxAs1-x (x < 0.05) films on (100) GaAs substrates. The faceted growth mode is favored by high growth temperatures, high nitrogen content, and high arsenic flux. The best electronic quality material, as measured by low-temperature photoluminescence. was obtained at high growth temperatures and high arsenic flux without exceeding the threshold for facet formation. The nitrogen content was found to be insensitive to the arsenic flux. (C) 2001 American Vacuum Society.

引用

页码：1417 / 1421

页数：5

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