Five layer stack of nitride, oxide, and amorphous silicon on glass, analyzed with spectroscopic ellipsometry

被引:4
作者
Tompkins, HG
Williams, PH
机构
[1] Motorola Inc., Tempe
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1997年 / 15卷 / 03期
关键词
D O I
10.1116/1.580793
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A stack of nitride/oxide/amorphous Si/oxide/nitride on a glass substrate was fabricated and subsequently analyzed with spectroscopic ellipsometry. The oxides and nitrides were deposited by plasma-enhanced chemical-vapor-deposition and the amorphous Si was deposited with sputter deposition. The optical constants of these materials depend on deposition conditions and hence handbook values cannot be used. The optical constants of the amorphous Si layer are modeled as a combination of Lorentz oscillators. A further complication is that the amorphous Si layer is opaque over about half of the spectral range. Drawbacks of the straight-forward analysis method are discussed and an enhanced analysis method is described and the results presented. The enhanced method improves the uncertainty in the thickness determination of two of the layers by an order of magnitude. (C) 1997 American Vacuum Society.
引用
收藏
页码:992 / 997
页数:6
相关论文
共 16 条
[1]   SPECTROSCOPIC ANALYSIS OF THE INTERFACE BETWEEN SI AND ITS THERMALLY GROWN OXIDE [J].
ASPNES, DE ;
THEETEN, JB .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (06) :1359-1365
[2]   OPTIMIZING PRECISION OF ROTATING-ANALYZER ELLIPSOMETERS [J].
ASPNES, DE .
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1974, 64 (05) :639-646
[3]   DIELECTRIC-PROPERTIES OF HEAVILY DOPED CRYSTALLINE AND AMORPHOUS-SILICON FROM 1.5 TO 6.0 EV [J].
ASPNES, DE ;
STUDNA, AA ;
KINSBRON, E .
PHYSICAL REVIEW B, 1984, 29 (02) :768-779
[4]  
Azzam R., 1977, ELLIPSOMETRY POLARIZ
[5]  
AZZAM RMA, 1977, ELLIPSOMETRY POLARIZ, P277
[6]  
Cauchy L., 1830, Bull. des Sci. Math, V14, P9
[7]  
*JA WOOLL CO INC, 1995, GUID US WVASE32
[8]  
Jellison G. E. Jr., 1992, Optical Materials, V1, P41, DOI 10.1016/0925-3467(92)90015-F
[9]  
JENKINS FA, 1957, FUNDAMENTALS OPTICS, P524
[10]   PLASMA ASSISTED CHEMICAL VAPOR-DEPOSITED THIN-FILMS FOR MICROELECTRONIC APPLICATIONS [J].
NGUYEN, SV .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (05) :1159-1167