The high-density microwave plasma for high rate deposition of microcrystalline silicon

被引：10

作者：

Shirai, H

Sakuma, Y

Ueyama, H

机构：

[1] Saitama Univ, Fac Engn, Dept Funct Mat Sci, Urawa, Saitama 3388570, Japan

[2] Nihon Koshuha Co Ltd, Midori Ku, Kanagawa 2260011, Japan

来源：

THIN SOLID FILMS | 1999年 / 345卷 / 01期

关键词：

large-scaled plasma; low electron temperature; high-density plasma; microwave plasma; high rate deposition; mu c-Si : H; SiH4; SiH2Cl2;

D O I：

10.1016/S0040-6090(99)00097-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A high density plasma produced by a microwave discharge (2.45 GHz) utilizing a spokewise antenna is applied for the large-scaled deposition of hydrogenated microcrystalline silicon (mu c-Si:H) film. The plasma maintains a uniform state within +/- 6% over a diameter of 16 cm. The high density plasma, > 10(11) cm(-3) has been sustained with low electron temperatures of 2-2.5 eV in Ar low pressure plasma of several mTorr without magnetic fields. Highly crystallized and photoconductive mu c-Si:H(Cl) film is produced by adding small addition of SiH4 under steady flow of dichlorosilane (SiH2Cl2), H-2 and Ar plasma at high deposition rate of about 20 Angstrom/s. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：7 / 11

页数：5

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