The control of the high-density microwave plasma for large-area electronics

被引：8

作者：

Shirai, H

Sakuma, Y

Ueyama, H

机构：

[1] Saitama Univ, Fac Engn, Dept Funct Mat Sci, Urawa, Saitama 3388570, Japan

[2] Nihon Koshuha Co Ltd, Midori Ku, Kanagawa 2260011, Japan

来源：

THIN SOLID FILMS | 1999年 / 337卷 / 1-2期

关键词：

large-area plasma; low-electron temperature; high-density plasma; microwave plasma; spokewise antenna; mu c-Si : H; SiH2Cl2; high rate deposition;

D O I：

10.1016/S0040-6090(98)01167-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A uniform, low-temperature, and high-density microwave plasma (2.45 GHz) is produced without magnetic field, utilizing a spokewise antenna. The plasma maintains a uniform state in Ar low pressure of several 10 mTorr with high electron density, >10(11) cm(-3), and a temperature Less than 2.5 eV within +/-6% over 16 cm in diameter. Highly crystallized and photoconductive, hydrogenated microcrystalline silicon (mu c-Si:H) film is produced from dichlorosilane (SiH:Cl-2), H-2 and Ar mixture at high deposition rate of mon than 5 Angstrom/s. This low-temperature and high-density microwave plasma source has a high potential not only for etching but for future large-area film deposition processes. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

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页码：12 / 17

页数：6

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