Effect of annealing temperature on luminescence in Eu implanted GaN

被引：33

作者：

Bodiou, L

Oussif, A

Braud, A

Doualan, JL

Moncorgé, R

Lorenz, K

Alves, E

机构：

[1] Univ Caen, CIRIL, CNRS,UMR 6634, CEA,ENSICAEN, F-14050 Caen, France

[2] Inst Tecnol & Nucl, PT-2685953 Sacavem, Portugal

来源：

OPTICAL MATERIALS | 2006年 / 28卷 / 6-7期

关键词：

GaN; europium; spectroscopy; luminescence;

D O I：

10.1016/j.optmat.2005.09.022

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Europium red photoluminescence (D-5(0)->F-7(2)) in implanted GaN samples is investigated as a function of the annealing temperature. For above bandgap excitation a remarkable increase of the photoluminescence (PL) is observed for samples annealed at 1300 degrees C. Excitation density dependent measurements at 12 K reveal the existence of two major incorporation sites for Eu3+ ions in GaN samples. Spectral characteristics of the two Eu3+ centers are described. Eu3+ D-5(0) lifetimes and effective excitation cross-sections specific to each Eu3+ center are determined in various samples. Results suggest that one center corresponds to Eu3+ ions in Ga substitutional sites with a corresponding rather low effective excitation cross-section compared to the other center which exhibits a higher excitation cross-section and is probably associated to a more distorted local environment. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：780 / 784

页数：5

共 11 条

[1] MBE growth of Eu- or Tb-doped GaN and its optical properties [J].