Optoelectronic properties and applications of rare-earth-doped GaN

The utility of increasing the bandgap of the semiconductor host is addressed. The recent development in the RE doping of wide-bandgap semiconductor GaN for RE-activated light emission at visible and near-IR wavelengths is discussed. It is shown that in GaN, no significant thermal quenching of the luminescence activity is observed up to temperatures as high as 275°C.