MO(GS)MBE and photo-MO(GS)MBE of II-VI semiconductors

Metalorganic molecular beam epitaxy (MOMBE) and gas source molecular beam epitaxy (GSMBE), compared to solid source MBE, possess advantages of precise composition control and possibility of selective area growth in the growth of II-VI semiconductor multilayer structures. Layer-by-layer controlled quantum wells have been demonstrated by MOMBE, bur the most significant problem in MO(GS)MBE at present seems to lay in deep level and compensating defects which obstruct the high quality epilayers and p-type doping. Nevertheless, recent efforts in MO(GS)MBE have gradually demonstrated the high potential of this growth technique showing. e.g., successful 200 K pulsed operation of a laser diode. Further development of the epilayer quality and device performance will be achieved by an appropriate combination of source precursors and above bandgap photoirradiation.