A matrix formalism for the Hall effect in multicarrier semiconductor systems

A matrix formalism for the Hall effect is presented for an arbitrary J-fold multicarrier semiconductor system. Explicit formulas are derived for important transport quantities such as the sheet resistance, the Hall coefficient, and the Hall scattering factor. For J less than or equal to 3, these formulas reduce to simple closed-form expressions as a function of the applied magnetic field and the carrier densities and mobilities. The closed-form formulas are useful for the correct interpretation of the Hall effect in multicarrier semiconductor systems. The field dependence and asymptotic behavior of these formulas are also discussed. [S0021-8979(99)07118-2].