Formation of three-dimensional quantum-dot superlattices in amorphous systems: Experiments and Monte Carlo simulations

被引:57
作者
Buljan, M. [1 ]
Desnica, U. V. [1 ]
Ivanda, M. [1 ]
Radic, N. [1 ]
Dubcek, P. [1 ]
Drazic, G. [2 ]
Salamon, K. [3 ]
Bernstorff, S. [4 ]
Holy, V. [5 ]
机构
[1] Rudjer Boskovic Inst, Zagreb 10000, Croatia
[2] Jozef Stefan Inst, Ljubljana 1000, Slovenia
[3] Inst Phys, Zagreb 10000, Croatia
[4] Sincrotrone Trieste, I-34102 Basovizza, Italy
[5] Charles Univ Prague, Fac Math & Phys, Prague 12116, Czech Republic
关键词
annealing; elemental semiconductors; germanium; Monte Carlo methods; nucleation; self-assembly; semiconductor quantum dots; semiconductor superlattices; semiconductor-insulator boundaries; silicon compounds; surface morphology; X-ray scattering; SELF-ORGANIZED GROWTH; GE NANOCRYSTALS; GRAZING-INCIDENCE; DIFFRACTION; RAMAN; NANOPARTICLES; SCATTERING; STACKING; FILMS; ANGLE;
D O I
10.1103/PhysRevB.79.035310
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Quantum dots ordered in regular lattices, called quantum-dot superlattices, offer numerous possibilities for the creation of novel materials. The formation of such structures during multilayer deposition has been studied and explained satisfactorily only in crystalline materials. Here we are reporting the spontaneous formation of quantum-dot superlattices in amorphous systems. The observed superlattices comprise Ge quantum dots embedded in amorphous SiO2 matrix. The internal structure and shape of Ge quantum dots can be controlled by postdeposition thermal annealing. The superlattices show collective behavior properties that appear to be the consequence of a regular ordering of quantum dots. The observed self-organized growth is explained and successfully simulated by a theoretical model based on the interplay of diffusion-mediated nucleation and surface morphology effects. The presented results can be applied more generally and show the ability of formation of regularly ordered, densely packed, and uniformly sized quantum-dot arrays in amorphous matrices.
引用
收藏
页数:11
相关论文
共 51 条
[11]   DISLOCATION-FREE STRANSKI-KRASTANOW GROWTH OF GE ON SI(100) [J].
EAGLESHAM, DJ ;
CERULLO, M .
PHYSICAL REVIEW LETTERS, 1990, 64 (16) :1943-1946
[12]   Magnetically induced Bragg scattering of electrons in quantum-dot crystals [J].
Elhassan, M ;
Akis, R ;
Bird, JP ;
Ferry, DK ;
Ida, T ;
Ishibashi, K .
PHYSICAL REVIEW B, 2004, 70 (20) :205341-1
[13]   Film growth viewed as stochastic dot processes [J].
Fanfoni, M ;
Tomellini, M .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2005, 17 (17) :R571-R605
[14]   Growth of Ge nanoparticles on SiO2/Si interfaces during annealing of plasma enhanced chemical vapor deposited thin films [J].
Foss, S. ;
Finstad, T. G. ;
Dana, A. ;
Aydinli, A. .
THIN SOLID FILMS, 2007, 515 (16) :6381-6384
[15]   GROWTH OF GE MICROCRYSTALS IN SIO2 THIN-FILM MATRICES - A RAMAN AND ELECTRON-MICROSCOPIC STUDY [J].
FUJII, M ;
HAYASHI, S ;
YAMAMOTO, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (04) :687-694
[16]  
Hosemann R., 1962, DIRECT ANAL DIFFRACT
[17]   Raman scattering of acoustical modes of silicon nanoparticles embedded in silica matrix [J].
Ivanda, M ;
Hohl, A ;
Montagna, M ;
Mariotto, G ;
Ferrari, M ;
Orel, ZC ;
Turkovic, A ;
Furic, K .
JOURNAL OF RAMAN SPECTROSCOPY, 2006, 37 (1-3) :161-165
[18]   Structural and electrical properties of silicon dioxide layers with embedded germanium nanocrystals grown by molecular beam epitaxy [J].
Kanjilal, A ;
Hansen, JL ;
Gaiduk, P ;
Larsen, AN ;
Cherkashin, N ;
Claverie, A ;
Normand, P ;
Kapelanakis, E ;
Skarlatos, D ;
Tsoukalas, D .
APPLIED PHYSICS LETTERS, 2003, 82 (08) :1212-1214
[19]   Formation and ordering of Ge nanocrystals on SiO2 [J].
Karmous, A ;
Berbezier, I ;
Ronda, A .
PHYSICAL REVIEW B, 2006, 73 (07)
[20]   Hybridization of electronic states in quantum dots through photon emission [J].
Karrai, K ;
Warburton, RJ ;
Schulhauser, C ;
Högele, A ;
Urbaszek, B ;
McGhee, EJ ;
Govorov, AO ;
Garcia, JM ;
Gerardot, BD ;
Petroff, PM .
NATURE, 2004, 427 (6970) :135-138