Characteristics of narrow channel MOSFET memory based on silicon nanocrystals

被引：19

作者：

Shi, Y

Saito, K

Ishikuro, H

Hiramoto, T

机构：

[1] Univ Tokyo, Inst Ind Sci, Minato Ku, Tokyo 1068558, Japan

[2] Univ Tokyo, VLSI Design & Educ Ctr, Bunkyo Ku, Tokyo 1138656, Japan

[3] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 4B期

关键词：

silicon nanocrystal; floating gate; MOSFET memory;

D O I：

10.1143/JJAP.38.2453

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Metal-oxide-semiconductor field-effect transistor (MOSFET) memory devices with silicon-nanocrystal-based floating gates on a narrow channel have been fabricated. Electrical measurements have been performed in the temperature range of 20-300 K for devices of various channel dimensions. Large threshold voltage shifts are obtained, being obviously dependent on channel width, and independent of channel length. It is experimentally Pound that the threshold voltage shift and charge retention characteristics are almost independent of temperature. Furthermore, single electron charge/discharge processes are observed in the device with the narrowest channel.

引用

收藏

页码：2453 / 2456

页数：4

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