Measurement of the effect of self-heating in strained-silicon MOSFETs

被引:116
作者
Jenkins, KA [1 ]
Rim, K [1 ]
机构
[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
关键词
channel temperature; FET; current-voltage (I-V) curves; measurement; MOSFET; output characteristics; self-heating; SiGe; silicon-on-insulator (SOI); strained-silicon submicron;
D O I
10.1109/LED.2002.1004235
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The self-heating of strained-silicon MOSFETs is demonstrated experimentally. Output characteristics measured by a pulse technique, in which self-heating is absent, show as much as 15% greater drain current (for 15% Ge content) than the corresponding static measurements. Comparison of the current measured this way with the static measurements allows an estimate of the channel temperature during the static operation. The temperature rise is compared to a simple estimate of the thermal resistance of the FET.
引用
收藏
页码:360 / 362
页数:3
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