Spin-dependent single-electron-tunneling effects in epitaxial Fe nanoparticles

被引:33
作者
Ernult, F
Yamane, K
Mitani, S
Yakushiji, K
Takanashi, K
Takahashi, YK
Hono, K
机构
[1] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan
[2] Japan Sci & Technol Agcy, CREST, Kawaguchi 3320012, Japan
[3] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan
关键词
D O I
10.1063/1.1712035
中图分类号
O59 [应用物理学];
学科分类号
摘要
Fe/MgO/Fe nanoparticles/MgO/Co double tunnel junctions were prepared by molecular beam epitaxy for current-perpendicular-to-plane transport measurements on submicrometer-sized pillars. Microstructural observations indicate that the samples exhibit a fully epitaxial layered structure with sharp and flat interfaces including well-defined separated Fe nanoparticles between the barriers. The introduction of asymmetric MgO tunnel barriers, i.e., with different thicknesses, in the double junction leads to a clear observation of Coulomb staircase and associated tunnel magnetoresistance oscillations. An estimation of the capacitance of the system indicates that these transport phenomena are due to charging effects of the magnetic particles. (C) 2004 American Institute of Physics.
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页码:3106 / 3108
页数:3
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