Magnetoresistance oscillations in double ferromagnetic tunnel junctions with layered ferromagnetic nanoparticles

被引：22

作者：

Nakajima, K ^{[1
]}

Saito, Y ^{[1
]}

Nakamura, S ^{[1
]}

Inomata, K ^{[1
]}

机构：

[1] Toshiba Corp, Ctr Corp Res & Dev, Kawasaki, Kanagawa 8582, Japan

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2000年 / 36卷 / 05期

关键词：

single electron tunneling effect; double tunnel junction; nanoparticle; tunnel magnetoresistance;

D O I：

10.1109/20.908595

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Tunnel magnetoresistance in double tunnel junctions with layered ferromagnetic nanoparticles was investigated, The sample comprises two ferromagnetic electrodes (CoFe/Fe) separated by an Al2O3 insulating Layer in which layered Co80Pt20 nanoparticles are embedded, The nanoparticles are ellipsoidal with an average diameter of 3.7 nm, and composes a well-defined layer, At 10 K, we observed magnetoresistance oscillation with respect to the bias voltage, The observed TMR oscillation, with a period of 1.6 mV, accompanied oscillations of the conductance, we consider that the conductance oscillation may originate from the single electron charging effect.

引用

页码：2806 / 2808

页数：3

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