Epitaxial growth of ZnO thin films on LiNbO3 substrates

被引：45

作者：

Matsubara, K ^{[1
]}

Fons, P ^{[1
]}

Yamada, A ^{[1
]}

Watanabe, M ^{[1
]}

Niki, S ^{[1
]}

机构：

[1] Electrotech Lab, Div Optoelect, Tsukuba, Ibaraki 3058568, Japan

来源：

THIN SOLID FILMS | 1999年 / 347卷 / 1-2期

关键词：

sputtering; X-ray diffraction; lithium niobate; zinc oxide;

D O I：

10.1016/S0040-6090(99)00037-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

ZnO thin films have been epitaxially grown on LiNbO3 (0001) substrates by rf magnetron sputtering. The crystallinity was examined by Xray diffraction. The omega-rocking curve full width at half-maximum for the ZnO (0002) reflection for films grown at 550 degrees C was 0.46 degrees. The epitaxial relationship between the ZnO film and the LiNbO3 substrate was determined to be [11 (2) over bar 0] ZnO//[10 (1) over bar 0] LiNbO3. The lattice mismatch for this orientation is about 9%, while it is about 18% for ZnO films on sapphire (0001) substrates. The temperature necessary for epitaxy was found to be lower than that required for films grown on sapphire. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：238 / 240

页数：3

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