An x-ray standing-wave study of H2S adsorption on InP(110)

被引：15

作者：

Dudzik, E

Leslie, A

OToole, E

McGovern, IT

Patchett, A

Zahn, DRT

Ludecke, J

Woodruff, DP

Cowie, BCC

机构：

[1] TECH UNIV CHEMNITZ,FACHBEREICH PHYS,D-09126 CHEMNITZ,GERMANY

[2] UNIV WARWICK,DEPT PHYS,COVENTRY CV4 7AL,W MIDLANDS,ENGLAND

[3] DARESBURY LAB,WARRINGTON WA4 4AB,CHESHIRE,ENGLAND

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1996年 / 8卷 / 01期

关键词：

D O I：

10.1088/0953-8984/8/1/004

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The sulphur adsorption site for H2S-dosed InP(110) has been determined using normal-incidence x-ray standing waves (NIXSW) using the (220), (022) and (113) Bragg planes for triangulation. Photoabsorption was monitored by photoelectron emission from the S 1s, P 1s and In 3d(5/2) core levels. The sulphur was found to be located in the phosphorus sites of the continued-layer structure, bonding to the surface indium. Using Auger electron emission for surface-sensitive NIXSW, it was found that H2S adsorption lifts the relaxation of the clean surface.

引用

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页码：15 / 24

页数：10

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