THE INFLUENCE OF ADSORBED LAYERS IN CONTROLLING SCHOTTKY BARRIERS

被引:31
作者
MONTGOMERY, V
WILLIAMS, RH
SRIVASTAVA, GP
机构
来源
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1981年 / 14卷 / 08期
关键词
D O I
10.1088/0022-3719/14/8/005
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:L191 / L194
页数:4
相关论文
共 13 条
[1]   CHEMICALLY-INDUCED CHARGE REDISTRIBUTION AT AL-GAAS INTERFACES [J].
BRILLSON, LJ ;
BACHRACH, RZ ;
BAUER, RS ;
MCMENAMIN, J .
PHYSICAL REVIEW LETTERS, 1979, 42 (06) :397-401
[2]   ENERGY-LEVELS OF SEMICONDUCTOR SURFACE VACANCIES [J].
DAW, MS ;
SMITH, DL .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :1028-1031
[3]  
HUGHES GF, UNPUBLISHED
[4]  
MCKINLEY AM, 1980, J PHYS SOLID STATE P, V13, P1
[5]  
Milnes A., 1973, DEEP IMPURITIES SEMI
[6]   INFLUENCE OF INTERMEDIATE ADSORBED LAYERS ON THE METAL CONTACTS FORMED TO INDIUM-PHOSPHIDE CRYSTALS [J].
MONTGOMERY, V ;
MCKINLEY, A ;
WILLIAMS, RH .
SURFACE SCIENCE, 1979, 89 (1-3) :635-642
[7]   CHEMICAL BONDING AT METAL-SEMICONDUCTOR INTERFACES [J].
PHILLIPS, JC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (06) :947-950
[8]  
Rhoderick E.H., 1978, METAL SEMICONDUCTORS
[9]   REDUCING EFFECTIVE HEIGHT OF A SCHOTTKY-BARRIER USING LOW-ENERGY ION-IMPLANTATION [J].
SHANNON, JM .
APPLIED PHYSICS LETTERS, 1974, 24 (08) :369-371
[10]   NEW AND UNIFIED MODEL FOR SCHOTTKY-BARRIER AND III-V INSULATOR INTERFACE STATES FORMATION [J].
SPICER, WE ;
CHYE, PW ;
SKEATH, PR ;
SU, CY ;
LINDAU, I .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1422-1433