Aqueous Inorganic Inks for Low-Temperature Fabrication of ZnO TFTs

被引:311
作者
Meyers, Stephen T. [1 ]
Anderson, Jeremy T. [1 ]
Hung, Celia M. [2 ]
Thompson, John [3 ]
Wager, John F. [2 ]
Keszler, Douglas A. [1 ]
机构
[1] Oregon State Univ, Dept Chem, Corvallis, OR 97331 USA
[2] Oregon State Univ, Sch Elect Engn & Comp Sci, Corvallis, OR 97331 USA
[3] Hewlett Packard Corp, Corvallis, OR 97330 USA
基金
美国国家科学基金会;
关键词
D O I
10.1021/ja808243k
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A simple, low-cost, and nontoxic aqueous ink chemistry is described for digital printing of ZnO films. Selective design through controlled precipitation, purification, and dissolution affords an aqueous Zn(OH)(x)(NH3)y((2) (x)+) solution that is stable in storage, yet promptly decomposes at temperatures below 150 degrees C to form wurtzite ZnO. Dense, high-quality, polycrystalline ZnO films are deposited by ink-jet printing and spin-coating, and film structure is elucidated via X-ray diffraction and electron microscopy. Semiconductor film functionality and quality are examined through integration in bottom-gate thin-film transistors. Enhancement-mode TFTs with ink-jet printed ZnO channels annealed at 300 degrees C are found to exhibit strong field effect and excellent current saturation in tandem with incremental mobilities from 4-6 cm(2) V-1 s(-1). Spin-coated ZnO semiconductors processed at 150 degrees C are integrated with solution-deposited aluminum oxide phosphate dielectrics in functional transistors, demonstrating both high performance, i.e., mobilities Up to 1.8 cm(2) V (1) s (1), and the potential for low-temperature solution processing of all-oxide electronics.
引用
收藏
页码:17603 / 17609
页数:7
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