Comparative electron diffraction study of the diamond nucleation layer on Ir(001)

被引：17

作者：

Gsell, S. ^{[1
]}

Berner, S. ^{[2
]}

Brugger, T. ^{[2
]}

Schreck, M. ^{[1
]}

Brescia, R. ^{[1
]}

Fischer, M. ^{[1
]}

Greber, T. ^{[2
]}

Osterwalder, J. ^{[2
]}

Stritzker, B. ^{[1
]}

机构：

[1] Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany

[2] Univ Zurich, Inst Phys, CH-8057 Zurich, Switzerland

来源：

关键词：

diamond growth and characterisation; heteroepitaxy; bias enhanced nucleation; iridium; XPD;

D O I：

10.1016/j.diamond.2008.02.040

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The carbon layer formed during the bias enhanced nucleation (BEN) procedure on iridium has been studied by different electron diffraction techniques. In reflection high energy electron diffraction (RHEED) and low energy electron diffraction (LEED) the carbon nucleation layer does not give any indication of crystalline diamond even if the presence of domains proves successful nucleation. In contrast, X-ray photoelectron diffraction (XPD) shows a clear C 1s pattern when domains are present after BEN. The anisotropy in the Ir XPD patterns is reduced after BEN while the fine structure is essentially identical compared to a single crystal Ir film. The change in the Ir XPD patterns after BEN can be explained by the carbon layer on top of a crystallographically unmodified Ir film. The loss and change in the fine structure of the C Is patterns as compared to a single crystal diamond film are discussed in terms of mosaicity and a defective structure of the ordered fraction within the carbon layer. The present results suggest that the real structure of the BEN layer is more complex than a pure composition of small but perfect diamond crystallites embedded in an amorphous matrix. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：1029 / 1034

页数：6

共 31 条

[21] Epitaxial growth of diamond on iridium [J].