Epitaxial growth and properties of MnAs/GaAs/MnAs trilayer heterostructures

被引：8

作者：

Tanaka, M ^{[1
]}

Saito, K ^{[1
]}

Goto, M ^{[1
]}

Nishinaga, T ^{[1
]}

机构：

[1] Univ Tokyo, Dept Elect Engn, Bunkyo Ku, Tokyo 1138656, Japan

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 1999年 / 198-99卷

基金：

日本科学技术振兴机构;

关键词：

trilayer; magnetic heterostructures; molecular-beam epitaxy;

D O I：

10.1016/S0304-8853(98)01017-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have grown MnAs/GaAs/MnAs ferromagnet/semiconductor trilayer heterostructures on GaAs (1 1 1)B substrates by molecular-beam epitaxy. Cross-sectional transmission electron microscopy showed that the trilayers are formed as intended with fairly abrupt and smooth interfaces. The epitaxial orientations of MnAs and GaAs are (0 0 0 1) and (1 1 1), respectively. Double steps were observed in the magnetization characteristics due to the difference in coercive force between the two MnAs layers. The interlayer coupling was little when the thickness of the GaAs was 5-10 nm. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：719 / 721

页数：3

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