Design of low-loss single-mode vertical-cavity surface-emitting lasers

被引：17

作者：

Bond, AE ^{[1
]}

Dapkus, PD ^{[1
]}

O'Brien, JD ^{[1
]}

机构：

[1] Univ So Calif, Los Angeles, CA 90089 USA

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 1999年 / 5卷 / 03期

关键词：

aluminum arsenide oxide; distributed Bragg; reflector lasers; semiconductor lasers; surface-emitting lasers;

D O I：

10.1109/2944.788420

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An in depth study of aperture placement relative to the electric field standing wave of oxide aperture vertical-cavity surface-emitting lasers (VCSEL's) is presented. VCSEL's with oxide apertures placed at a node and at an antinode are studied fur their dependence of internal loss, far field, threshold current, and efficiency on the position of a thin AlO2 current aperture relative to the longitudinal standing wave in the cavity.

引用

收藏

页码：574 / 581

页数：8

相关论文

共 33 条

[1]

Agrawal G. P, 1997, FIBER OPTIC COMMUNIC, V2nd

[2] MODAL REFLECTION OF QUARTER-WAVE MIRRORS IN VERTICAL-CAVITY LASERS [J].

BABIC, DI ;

CHUNG, YC ;

DAGLI, N ;

BOWERS, JE .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1993, 29 (06) :1950-1962

[3] Modeling of oxide-confined vertical-cavity surface-emitting lasers [J].

Bissessur, HK ;

Koyama, F ;

Iga, K .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (02) :344-352

[4] Monolithically integrated surface and substrate emitting vertical cavity lasers for smart pixels [J].

Bond, AE ;

Dapkus, PD .

APPLIED PHYSICS LETTERS, 1998, 73 (01) :19-21

[5] Aperture placement effects in oxide-defined vertical-cavity surface-emitting lasers [J].

Bond, AE ;

Dapkus, PD ;

O'Brien, JD .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1998, 10 (10) :1362-1364

[6] Backgating reduction in MESFETs using an AlAs native oxide buffer layer [J].

Bond, AE ;

Lin, CK ;

MacDougal, MH ;

Dapkus, PD ;

Kaviani, K ;

Adamczyk, O ;

Nottenburg, R .

ELECTRONICS LETTERS, 1996, 32 (24) :2271-2273

[7] Modal and threshold analysis of dielectric-apertured vertical cavity surface emitting lasers [J].

Chang, KY ;

Woodhead, J ;

Robson, PN .

APPLIED PHYSICS LETTERS, 1998, 72 (03) :335-337

[8] Self-defined AlAs-oxide-current-aperture buried heterostructure vertical cavity surface-emitting laser [J].

Choi, WJ ;

Dapkus, PD .

APPLIED PHYSICS LETTERS, 1998, 73 (12) :1661-1663

[9] LOW-THRESHOLD VOLTAGE VERTICAL-CAVITY LASERS FABRICATED BY SELECTIVE OXIDATION [J].

CHOQUETTE, KD ;

SCHNEIDER, RP ;

LEAR, KL ;

GEIB, KM .

ELECTRONICS LETTERS, 1994, 30 (24) :2043-2044

[10] Scalability of small-aperture selectively oxidized vertical cavity lasers [J].

Choquette, KD ;

Chow, WW ;

Hadley, GR ;

Hou, HQ ;

Geib, KM .

APPLIED PHYSICS LETTERS, 1997, 70 (07) :823-825

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