Self-defined AlAs-oxide-current-aperture buried heterostructure vertical cavity surface-emitting laser

被引：4

作者：

Choi, WJ ^{[1
]}

Dapkus, PD ^{[1
]}

机构：

[1] Univ So Calif, Ctr Photon Technol, Dept Elect Engn Electrophys, Los Angeles, CA 90089 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 12期

关键词：

D O I：

10.1063/1.122238

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate a promising technique to fabricate self-defined AlAs-oxide-cullent-apertures for vertical cavity surface-emitting lasers (VCSELs). A self-defined AlAs-oxide-current-aperture buried heterostructure VCSEL was fabricated using a three-step growth sequence. The active region mesa size was 10 mu m X 10 mu m. The lowest threshold current of the lasers was 0.7 mA under continuous-wave operation at room temperature. The differential quantum efficiency was 32%. The lasers operate at temperatures of up to 50 degrees C. (C) 1998 American Institute of Physics.

引用

页码：1661 / 1663

页数：3

共 11 条

[1]

BOND AE, IN PRESS IEEE PHOTON

[2] LOW-THRESHOLD BURIED HETEROSTRUCTURE VERTICAL-CAVITY SURFACE-EMITTING LASER [J].

CHANGHASNAIN, CJ ;

WU, YA ;

LI, GS ;

HASNAIN, G ;

CHOQUETE, KD ;

CANEAU, C ;

FLOREZ, LT .

APPLIED PHYSICS LETTERS, 1993, 63 (10) :1307-1309

[3] Confinement effects of AlAs native-oxide apertures buried in quantum well lasers [J].

Cheng, Y ;

MacDougal, MH ;

Lin, CK ;

Dapkus, PD .

15TH IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE - CONFERENCE DIGEST, 1996, :15-16

[4]

CHOI WJ, IN PRESS IEEE PHOTON

[5] HYDROLYZATION OXIDATION OF ALXGA1-XAS-ALAS-GAAS QUANTUM-WELL HETEROSTRUCTURES AND SUPERLATTICES [J].

DALLESASSE, JM ;

HOLONYAK, N ;

SUGG, AR ;

RICHARD, TA ;

ELZEIN, N .

APPLIED PHYSICS LETTERS, 1990, 57 (26) :2844-2846

[6] Low-threshold vertical-cavity surface-emitting lasers based on oxide-confinement and high contrast distributed Bragg reflectors [J].

Deppe, DG ;

Huffaker, DL ;

Oh, TH ;

Deng, HY ;

Deng, Q .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (03) :893-904

[7] Estimation of scattering losses in dielectrically apertured vertical cavity lasers [J].

Hegblom, ER ;

Babic, DI ;

Thibeault, BJ ;

Coldren, LA .

APPLIED PHYSICS LETTERS, 1996, 68 (13) :1757-1759

[8] SURFACE EMITTING SEMICONDUCTOR-LASERS [J].

IGA, K ;

KOYAMA, F ;

KINOSHITA, S .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (09) :1845-1855

[9] SELECTIVELY OXIDIZED VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH 50-PERCENT POWER CONVERSION EFFICIENCY [J].

LEAR, KL ;

CHOQUETTE, KD ;

SCHNEIDER, RP ;

KILCOYNE, SP ;

GEIB, KM .

ELECTRONICS LETTERS, 1995, 31 (03) :208-209

[10] ULTRALOW THRESHOLD CURRENT VERTICAL-CAVITY SURFACE-EMITTING LASERS OBTAINED WITH SELECTIVE OXIDATION [J].

YANG, GM ;

MACDOUGAL, MH ;

DAPKUS, PD .

ELECTRONICS LETTERS, 1995, 31 (11) :886-888

← 1 2 →