Backgating reduction in MESFETs using an AlAs native oxide buffer layer

被引：5

作者：

Bond, AE

Lin, CK

MacDougal, MH

Dapkus, PD

Kaviani, K

Adamczyk, O

Nottenburg, R

机构：

[1] Natl. Ctr. Intgd. Photonic Technol., Department of Electrical Engineering, University of Southern California, Los Angeles

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 24期

关键词：

MESFET; oxidation;

D O I：

10.1049/el:19961529

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors present a new approach to the reduction of the backgating effect in GaAs MESFETs. A thin 1200 Angstrom layer of the native oxide AlxOy is used in the buffer layer directly below the conducting channel and increases the backgating threshold to -17V, while retaining excellent device characteristics.

引用

页码：2271 / 2273

页数：3

共 15 条

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