Study of electrically active defects in n-GaN layer

被引:18
作者
Soh, CB
Chi, DZ
Ramam, A
Lim, HF
Chua, SJ
机构
[1] Inst Mat Res & Engn, Singapore 117602, Singapore
[2] Natl Univ Singapore, Ctr Optoelect, Dept Elect & Comp Engn, Singapore 117576, Singapore
关键词
GaN; DLTs; majority carrier trap; capacitance transient; logarithmic capture kinetics;
D O I
10.1016/S1369-8001(02)00025-2
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Deep level defects in both p(+)/n junctions and n-type Schottky GaN diodes are studied using the Fourier transform deep level transient spectroscopy, An electron trap level was detected in the range of energies at E-c-E-t = 0.23-0.27 eV with a capture cross-section of the order of 10(-19)-10(-16) cm(2) for both the p(+)/n and n-type Schottky GaN diodes. For one set of p(+)/n diodes with a structure of Au/Pt/p(+)-GaN/n-GaN/n(+)-GaN/Ti/Al/Pd/Au and the n-type Schottky diodes, two other common electron traps are found at energy positions, E-c-E-t = 0.53-0.56eV and 0.79-0.82eV. In addition, an electron trap level with energy position at E-c-E-t = 1.07eV and a capture cross-section of sigma(n) = 1.6 x 10(-13) cm(2) are detected for the n-type Schottky diodes. This trap level has not been previously reported in the literature. For the other set of p(+)/n diodes with a structure of Au/Ni/p(+)-GaN/n-GaN/n(+)-GaN/Ti/Al/Pd/Au, a prominent minority carrier (hole) trap level was also identified with an energy position at E-t-E-v = 0.85eV and a capture cross-section of sigma(n) = 8.1 x 10 (14) cm(2). The 0.56eV electron trap level observed in n-type Schottky diode and the 0.23 eV electron trap level detected in the p(+)/n diode with Ni/Au contact are attributed to the extended defects based on the observation of logarithmic capture kinetics. (C) 2002 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:595 / 600
页数:6
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