RHEED and AFM studies of homoepitaxial diamond thin film on C(001) substrate produced by microwave plasma CVD

被引：10

作者：

Takami, T

Suzuki, K

Kusunoki, I

Sakaguchi, I

Nishitani-Gamo, M

Ando, T

机构：

[1] Tohoku Univ, Sci Measurements Res Inst, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] Natl Inst Res Inorgan Mat, Japan Sci & Technol Corp, Core Res Evolut Sci & Technol, Tsukuba, Ibaraki 3050044, Japan

来源：

DIAMOND AND RELATED MATERIALS | 1999年 / 8卷 / 2-5期

关键词：

atomic force microscopy; CVD; homoepitaxy; reflection high-energy electron diffraction;

D O I：

10.1016/S0925-9635(98)00391-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A surface of a diamond thin film grown homoepitaxially on a C(001) substrate by microwave plasma chemical vapor deposition (CVD) has been studied using reflection high-energy electron diffraction (RHEED) and atomic force microscopy (AFM). The RHEED pattern showed the C(001)2 x 1/1 x2 double-domain structure. The AFM images taken from the same sample in air showed 1 x 1 but locally 2 x 1 structure, which was confirmed by the Fourier transformed pattern of the AFM image. (C) 1999 Elsevier Science S.A. All rights reserved.

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页码：701 / 704

页数：4

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