Excimer-laser micropatterned photobleaching as a means of isolating polymer electronic devices

被引：11

作者：

Itoh, E ^{[1
]}

Torres, I ^{[1
]}

Hayden, C ^{[1
]}

Taylor, DM ^{[1
]}

机构：

[1] Univ Wales, Sch Informat, Bangor LL57 1UT, Gwynedd, Wales

来源：

SYNTHETIC METALS | 2006年 / 156卷 / 2-4期

基金：

英国工程与自然科学研究理事会;

关键词：

polymer field-effect-transistor; poly(silsesquioxane); poly(3-hexylthiophene); photobleaching; conductivity; field-effect mobility; excimer-laser micro-machining;

D O I：

10.1016/j.synthmet.2005.10.015

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Results are reported of an investigation into the effects of UV irradiation on the electrical conductivity of poly(3-hexylthiophene) films and on the field-effect mobility in transistors formed from this semiconducting polymer. The UV Source used was a pulsed excimer-laser (KrF, 248nm) in a commercial, excimer-laser micromachining workstation. By limiting the fluence in the pulse to similar to 50 mJ/cm(2) controlled reductions of up to 2 orders of magnitude in both the bulk conductivity and field-effect mobility were achieved before significant ablation took place. Changes in the UV-vis spectrum of the P3HT show that reduced electrical transport is accompanied by an increase in the optical bandgap which is attributed to a reduction in pi-conjugation either by chain scission or photo-oxidation of the polymer. It is argued that photobleaching of selected regions of the semiconducting polymer film is a viable technique for isolating individual transistors in a polymer electronic circuit. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：129 / 134

页数：6

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