INTENSITY-DEPENDENT PHOTOBLEACHING IN THIN POLYMER-FILMS BY EXCIMER LASER - LITHOGRAPHIC IMPLICATIONS

被引：5

作者：

SHEATS, JR

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 10期

关键词：

D O I：

10.1063/1.94604

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1016 / 1018

页数：3

共 12 条

[1] DIRECT ETCHING OF POLYMERIC MATERIALS USING A XECL LASER [J].

ANDREW, JE ;

DYER, PE ;

FORSTER, D ;

KEY, PH .

APPLIED PHYSICS LETTERS, 1983, 43 (08) :717-719

[2] SELF-DEVELOPING RESIST WITH SUBMICROMETER RESOLUTION AND PROCESSING STABILITY [J].

GEIS, MW ;

RANDALL, JN ;

DEUTSCH, TF ;

DEGRAFF, PD ;

KROHN, KE ;

STERN, LA .

APPLIED PHYSICS LETTERS, 1983, 43 (01) :74-76

[3] 0.4-MU-M GATE-LENGTH DEVICES FABRICATED BY CONTRAST-ENHANCED LITHOGRAPHY [J].

GRIFFING, BF ;

WEST, PR ;

HEATH, BA .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (09) :317-320

[4] AN ANALYSIS OF SATURABLE ABSORBERS [J].

HERCHER, M .

APPLIED OPTICS, 1967, 6 (05) :947-&

[5] ULTRAFAST DEEP UV LITHOGRAPHY WITH EXCIMER LASERS [J].

JAIN, K ;

WILLSON, CG ;

LIN, BJ .

ELECTRON DEVICE LETTERS, 1982, 3 (03) :53-55

[6]

JAIN K, 1983, LASERS APPLICATIONS, P49

[7] DEEP UV SUB-MICRON LITHOGRAPHY BY USING A PULSED HIGH-POWER EXCIMER LASER [J].

KAWAMURA, Y ;

TOYODA, K ;

NAMBA, S .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) :6489-6490

[8] EFFECTIVE DEEP ULTRAVIOLET PHOTOETCHING OF POLY(METHYL METHACRYLATE BY AN EXCIMER LASER [J].

KAWAMURA, Y ;

TOYODA, K ;

NAMBA, S .

APPLIED PHYSICS LETTERS, 1982, 40 (05) :374-375

[9] STUDIES OF ORGANIC-MOLECULES AS SATURABLE ABSORBERS AT 193 NM [J].

MULLER, DF ;

ROTHSCHILD, M ;

BOYER, K ;

RHODES, CK .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (11) :1865-1871

[10] GENERAL SIMULATOR FOR VLSI LITHOGRAPHY AND ETCHING PROCESSES .1. APPLICATION TO PROJECTION LITHOGRAPHY [J].

OLDHAM, WG ;

NANDGAONKAR, SN ;

NEUREUTHER, AR ;

OTOOLE, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) :717-722

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