Annealing-dependent magnetic depth profile in Ga1-xMnxAs -: art. no. 081307

被引：43

作者：

Kirby, BJ ^{[1
]}

Borchers, JA

Rhyne, JJ

Velthuis, SGET

Hoffmann, A

O'Donovan, KV

Wojtowicz, T

Liu, X

Lim, WL

Furdyna, JK

机构：

[1] Univ Missouri, Dept Phys & Astron, Columbia, MO 65211 USA

[2] Natl Inst Stand & Technol, Ctr Neutron Res, Gaithersburg, MD 20899 USA

[3] Los Alamos Natl Lab, Manuel Lujan Jr Neutron Scattering Ctr, Los Alamos, NM 87545 USA

[4] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA

[5] Univ Maryland, Dept Mat Sci & Engn, College Pk, MD 20742 USA

[6] Univ Notre Dame, Dept Phys, Notre Dame, IN 46556 USA

[7] Polish Acad Sci, Inst Phys, PL-02688 Warsaw, Poland

来源：

PHYSICAL REVIEW B | 2004年 / 69卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.69.081307

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied the depth-dependent magnetic and structural properties of as-grown and optimally annealed Ga1-xMnxAs films using polarized neutron reflectometry. In addition to increasing the total magnetization, the annealing process was observed to produce a significantly more homogeneous distribution of the magnetization. This difference in the films is attributed to the redistribution of Mn at interstitial sites during the annealing process. Also, we have seen evidence of significant magnetization depletion at the surface of both as-grown and annealed films.

引用

页数：4

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