Ultra-short n-MOSFETs with strained Si: device performance and the effect of ballistic transport using Monte Carlo simulation

被引：14

作者：

Aubry-Fortuna, V ^{[1
]}

Bournel, A ^{[1
]}

Dollfus, P ^{[1
]}

Galdin-Retailleau, S ^{[1
]}

机构：

[1] Univ Paris 11, CNRS, UMR 8622, Inst Elect Fondamentale, F-91405 Orsay, France

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2006年 / 21卷 / 04期

关键词：

D O I：

10.1088/0268-1242/21/4/003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Semi-classical Monte Carlo simulation is used to study the electrical performance of 18-nm-long n-MOSFETs Including a strained Si channel. In particular, the impact of extrinsic series resistance on the drive current I-on is quantified: we show that the large on-current improvement induced by the strain is preserved, even by including an external parasitic resistance. The importance of ballistic transport is also examined and its influence on I-on is highlighted.

引用

页码：422 / 428

页数：7

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