Domain Engineering for Enhanced Ferroelectric Properties of Epitaxial (001) BiFeO Thin Films

被引：286

作者：

Jang, Ho Won ^{[1
]}

Ortiz, Daniel ^{[1
]}

Baek, Seung-Hyub ^{[1
]}

Folkman, Chad M. ^{[1
]}

Das, Rasmi R. ^{[1
]}

Shafer, Padraic ^{[2
,3
]}

Chen, Yanbin ^{[4
]}

Nelson, Christofer T. ^{[4
]}

Pan, Xiaoqing ^{[4
]}

Ramesh, Ramamoorthy ^{[2
,3
]}

Eom, Chang-Beom ^{[1
]}

机构：

[1] Univ Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USA

[2] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

[3] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

[4] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA

来源：

ADVANCED MATERIALS | 2009年 / 21卷 / 07期

基金：

美国国家科学基金会;

关键词：

MULTIFERROICS; CRYSTAL; GROWTH;

D O I：

10.1002/adma.200800823

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Two-variant stripe domains in BiFeO3 films on miscut (001) SrTiO3 substrates exhibit squarelike, complete ferroelectric switching with low leakage current. Both the preferential distortion of BiFeO3 unit cells and the persistent step-flow growth induced by the substrate anisotropy are the origins of the formation of the twovariant stripe domains in (001) BiFeO3 films.

引用

页码：817 / +

页数：8

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