Temperature-dependent leakage mechanisms of Pt/BiFeO3/SrRuO3 thin film capacitors

被引：184

作者：

Yang, H. ^{[1
]}

Jain, M. ^{[1
]}

Suvorova, N. A. ^{[1
]}

Zhou, H. ^{[1
]}

Luo, H. M. ^{[1
]}

Feldmann, D. M. ^{[1
]}

Dowden, P. C. ^{[1
]}

DePaula, R. F. ^{[1
]}

Foltyn, S. R. ^{[1
]}

Jia, Q. X. ^{[1
]}

机构：

[1] Los Alamos Natl Lab, Mat Phys & Applicat Div, Superconduct Technol Ctr, Los Alamos, NM 87545 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 07期

关键词：

D O I：

10.1063/1.2772666

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial c-axis oriented BiFeO3 (BFO) thin films were deposited on conductive SrRuO3 (SRO) on (001) SrTiO3 substrates by pulsed laser deposition. A Pt/BFO/SRO capacitor was constructed by depositing a top Pt electrode. The leakage current density versus. electric field characteristics were investigated from 80 to 350 K. It was found that the leakage mechanisms were a strong function of temperature and voltage polarity. At temperatures between 80 and 150 K, space-charge-limited current was the dominant leakage mechanism for both negative and positive biases. On the other hand, at temperatures between 200 and 350 K the dominant leakage mechanisms were Poole-Frenkle emission and Fowler-Nordheim tunneling for negative and positive biases, respectively. (C) 2007 American Institute of Physics.

引用

页数：3

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