Near-infrared electroluminescence in ErYb silicate based light-emitting device

被引：11

作者：

Wang, B. ^{[1
]}

Guo, R. M. ^{[1
,2
]}

Wang, X. J. ^{[1
]}

Wang, L. ^{[1
]}

Hong, L. Y. ^{[1
]}

Yin, B. ^{[1
]}

Gao, L. F. ^{[1
]}

Zhou, Z. ^{[1
]}

机构：

[1] Peking Univ, Sch Elect Engn & Comp Sci, State Key Lab Adv Opt Commun Syst & Networks, Beijing 100871, Peoples R China

[2] Natl Inst Metrol, Div Biol Energy & Environm Measurement, Beijing 100013, Peoples R China

来源：

OPTICAL MATERIALS | 2012年 / 34卷 / 08期

基金：

中国国家自然科学基金;

关键词：

Electroluminescence; ErYb silicate; Impact excitation; EXCITATION;

D O I：

10.1016/j.optmat.2012.02.026

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the first observation of near-infrared electroluminescence (EL) in ErYb silicate based metal-insulator-semiconductor (MIS) light-emitting device. The ErYb silicate thin film and the device were fabricated on silicon substrate using the standard silicon technology. The EL spectrum at 1.53 mu m was observed under a current density of 1.2 mA/cm(2). The conduction mechanism of the device was Fowler-Nordheim tunneling and the EL mechanism was attributed to the direct impact excitation of Er ions by the hot electrons produced by the high electric field in the silicate layer. (C) 2012 Elsevier B.V. All rights reserved.

引用

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页码：1371 / 1374

页数：4

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