Characterization of rapid thermal processing oxynitrides by SIMS and XPS analyses

被引：11

作者：

Bersani, M ^{[1
]}

Vanzetti, L ^{[1
]}

Sbetti, M ^{[1
]}

Anderle, M ^{[1
]}

机构：

[1] IRST, ITC, Phys & Chem Surface & Interface Div, I-38050 Trento, Italy

来源：

APPLIED SURFACE SCIENCE | 1999年 / 144-45卷

关键词：

SIMS; XPS; depth profiling; nitrogen; silicon oxide;

D O I：

10.1016/S0169-4332(98)00814-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Aim of this work is the characterisation of oxynitride films grown by rapid thermal processing (RTP) using nitrous oxide and nitric oxide precursors. The thickness of the oxynitrided layers is about 7 nm. Secondary ion mass spectrometry (SIMS) and X-ray photoemission spectroscopy (XPS) have been employed to obtain a complete chemical characterisation. XPS analyses have been performed at different depths after removal of oxynitride layers by chemical etching. SIMS and XPS analyses have been performed on the same samples after a reoxidation treatment as well. Depending on the precursors used, the oxynitrides show different characteristics. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：301 / 305

页数：5

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