Fermi level shift in La2-xSrxCuO4 probed by heteroepitaxial junctions with Nb-doped SrTiO3

被引：11

作者：

Li, B. -S. ^{[1
,2
,3
]}

Sawa, A. ^{[3
]}

Okamoto, H. ^{[2
]}

机构：

[1] Harbin Inst Technol HIT, Acad Fundamental & Interdisciplinary Sci, Harbin 150080, Peoples R China

[2] Univ Tokyo, Dept Adv Mat Sci, Kashiwa, Chiba 2778561, Japan

[3] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058562, Japan

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 11期

关键词：

D O I：

10.1063/1.4798252

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated Fermi-level shifts with carrier doping in La2-xSrxCuO4 (LSCO) (x = 0-0.35) by using heteroepitaxial junctions with Nb-doped SrTiO3. The junctions showed highly rectifying current-voltage characteristics, in accord with the conventional theory of a Schottky or p-n diode. For x = 0-0.20, the built-in potential increased with increase of x, indicating the downward shift of the Fermi-level in La2-xSrxCuO4. The Fermi-level shift however reversed to upward at x similar to 0.20. This behavior is related to the electronic-structure change, which is characterized by the reversal of dominant carrier type from hole to electron in overdoped La2-xSrxCuO4 confirmed by Hall measurements. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4798252]

引用

页数：4

共 13 条

[1] Anomalous Criticality in the Electrical Resistivity of La2-xSrxCuO4 [J].

Cooper, R. A. ;

Wang, Y. ;

Vignolle, B. ;

Lipscombe, O. J. ;

Hayden, S. M. ;

Tanabe, Y. ;

Adachi, T. ;

Koike, Y. ;

Nohara, M. ;

Takagi, H. ;

Proust, Cyril ;

Hussey, N. E. .

SCIENCE, 2009, 323 (5914) :603-607

[2]

Hwang HY, 2012, NAT MATER, V11, P103, DOI [10.1038/nmat3223, 10.1038/NMAT3223]

[3] SCALING OF THE TEMPERATURE-DEPENDENT HALL-EFFECT IN LA2-XSRXCUO4 [J].

HWANG, HY ;

BATLOGG, B ;

TAKAGI, H ;

KAO, HL ;

KWO, J ;

CAVA, RJ ;

KRAJEWSKI, JJ ;

PECK, WF .

PHYSICAL REVIEW LETTERS, 1994, 72 (16) :2636-2639

[4] Chemical potential shift in overdoped and underdoped La2-xSrxCuO4 [J].

Ino, A ;

Mizokawa, T ;

Fujimori, A ;

Tamasaku, K ;

Eisaki, H ;

Uchida, S ;

Kimura, T ;

Sasagawa, T ;

Kishio, K .

PHYSICAL REVIEW LETTERS, 1997, 79 (11) :2101-2104

[5] Modulation doping near Mott-insulator heterojunctions [J].

Lee, Wei-Cheng ;

MacDonald, A. H. .

PHYSICAL REVIEW B, 2006, 74 (07)

[6] Suppression of Precipitates in the La2-xSrxCuO4 Films Grown on LaSrAlO4 Substrates by Introducing Homoepitaxial Layer [J].

Li, Bing-Sheng ;

Sawa, Akihito ;

Okamoto, Hiroshi .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (09)

[7] Interface band profiles of Mott-insulator/Nb : SrTiO3 heterojunctions as investigated by optical spectroscopy [J].

Nakamura, Masao ;

Sawa, Akihito ;

Fujioka, Jun ;

Kawasaki, Masashi ;

Tokura, Yoshinori .

PHYSICAL REVIEW B, 2010, 82 (20)

[8] Band offsets of wide-band-gap oxides and implications for future electronic devices [J].

Robertson, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (03) :1785-1791

[9] Fermi level shift in La1-xSrxMO3 (M=Mn, Fe, Co, and Ni) probed by Schottky-like heteroepitaxial junctions with SrTi0.99Nb0.01O3 [J].

Sawa, A. ;

Yamamoto, A. ;

Yamada, H. ;

Fujii, T. ;

Kawasaki, M. ;

Matsuno, J. ;

Tokura, Y. .

APPLIED PHYSICS LETTERS, 2007, 90 (25)

[10]

Sze S.M., 2013, SEMICONDUCTOR DEVICE

← 1 2 →